Nanoscale interaction layer at the interface between Al films and SiO2 substrates of Al/AlOx/Al Josephson tunnel junctions
Artikel i vetenskaplig tidskrift, 2013

An interaction layer is found at the Al/SiO2 interface in Al/AlOx/Al tunnel junctions grown on SiO2 substrates. The amorphous intermixing layer has an average thickness of about 5 nm. We present the detailed structure of this interfacial layer as determined by transmission electron microscopy. The layer contains alumina with aluminum being octahedrally coordinated according to electron energy loss spectroscopy analysis rather than tetrahedrally coordinated, where the latter coordination is the most common type in amorphous alumina. Depth profiles of the Al-O and Si-O bonding characteristics were also investigated using energy loss near edge structure.

Författare

Lunjie Zeng

Chalmers, Teknisk fysik, Eva Olsson Group

Tine Greibe

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Samira Mousavi Nik

Chalmers, Teknisk fysik, Eva Olsson Group

Christopher Wilson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Per Delsing

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Eva Olsson

Chalmers, Teknisk fysik, Eva Olsson Group

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 113 14 Art. no. 143905-

Ämneskategorier

Annan teknik

DOI

10.1063/1.4801798

Mer information

Skapat

2017-10-07