Properties of buried silicon dioxide layers
Licentiate thesis, 1995
BESOI
charge tripping
radiation damage
silicon on insulator
separation by imlanted oxygen
bond and etchback SOI
SIMOX
thermal stress
SOI
charge injection
Author
Per Ericsson
Department of Solid State Electronics
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
91-7197-123-8
Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 199