Properties of buried silicon dioxide layers
Licentiate thesis, 1995

BESOI

charge tripping

radiation damage

silicon on insulator

separation by imlanted oxygen

bond and etchback SOI

SIMOX

thermal stress

SOI

charge injection

Author

Per Ericsson

Department of Solid State Electronics

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

91-7197-123-8

Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 199

More information

Created

10/7/2017