Properties of buried silicon dioxide layers
Licentiatavhandling, 1995
BESOI
charge tripping
radiation damage
silicon on insulator
separation by imlanted oxygen
bond and etchback SOI
SIMOX
thermal stress
SOI
charge injection
Författare
Per Ericsson
Institutionen för fasta tillståndets elektronik
Ämneskategorier
Annan elektroteknik och elektronik
ISBN
91-7197-123-8
Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 199