Properties of buried silicon dioxide layers
Licentiatavhandling, 1995

BESOI

charge tripping

radiation damage

silicon on insulator

separation by imlanted oxygen

bond and etchback SOI

SIMOX

thermal stress

SOI

charge injection

Författare

Per Ericsson

Institutionen för fasta tillståndets elektronik

Ämneskategorier

Annan elektroteknik och elektronik

ISBN

91-7197-123-8

Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 199