Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy
Licentiate thesis, 2002
MBE
2DEG
heterostructure field effect transistor
molecular beam epitaxy
epitexial growth
GaN
III-nitride
AlGaN
two dimensional electron gas
HFET
AlN
Author
Stefan Davidsson
Department of Microwave Electronics
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Technical report L - School of Electrical Engineering, Chalmers University of Technology.: 452