Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy
Licentiate thesis, 2002

MBE

2DEG

heterostructure field effect transistor

molecular beam epitaxy

epitexial growth

GaN

III-nitride

AlGaN

two dimensional electron gas

HFET

AlN

Author

Stefan Davidsson

Department of Microwave Electronics

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Technical report L - School of Electrical Engineering, Chalmers University of Technology.: 452

More information

Created

10/6/2017