Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy
Licentiatavhandling, 2002

MBE

2DEG

heterostructure field effect transistor

molecular beam epitaxy

epitexial growth

GaN

III-nitride

AlGaN

two dimensional electron gas

HFET

AlN

Författare

Stefan Davidsson

Institutionen för mikrovågselektronik

Ämneskategorier

Elektroteknik och elektronik

Technical report L - School of Electrical Engineering, Chalmers University of Technology.: 452