Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy
Licentiatavhandling, 2002
MBE
2DEG
heterostructure field effect transistor
molecular beam epitaxy
epitexial growth
GaN
III-nitride
AlGaN
two dimensional electron gas
HFET
AlN
Författare
Stefan Davidsson
Institutionen för mikrovågselektronik
Ämneskategorier
Elektroteknik och elektronik
Technical report L - School of Electrical Engineering, Chalmers University of Technology.: 452