GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition
Journal article, 2013

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300 degrees C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

ARRAYS

Author

K. Xu

C. Xu

Y. Xie

J. Deng

Y. X. Zhu

W. L. Guo

M. M. Mao

M. Xun

M. X. Chen

L. Zheng

Jie Sun

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 103 22 5-

Subject Categories

Physical Sciences

DOI

10.1063/1.4836375

More information

Created

10/8/2017