Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology
Journal article, 2014
millimeter-wave amplifier
LOW-NOISE AMPLIFIER
RECEIVER
Double heterojunction bipolar transistor (DHBT)
indium phosphide (InP)
SUBMILLIMETER-WAVE
monolithic microwave integrated circuit (MMIC)
H-band
Author
Klas Eriksson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Sten Gunnarsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Vessen Vassilev
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Terahertz Science and Technology
2156-342X (ISSN) 21563446 (eISSN)
Vol. 4 1 56-64 6583229Subject Categories
Physical Sciences
DOI
10.1109/tthz.2013.2275900