Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology
Journal article, 2014

Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.

millimeter-wave amplifier

LOW-NOISE AMPLIFIER

RECEIVER

Double heterojunction bipolar transistor (DHBT)

indium phosphide (InP)

SUBMILLIMETER-WAVE

monolithic microwave integrated circuit (MMIC)

H-band

Author

Klas Eriksson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Sten Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Vessen Vassilev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 4 1 56-64 6583229

Subject Categories

Physical Sciences

DOI

10.1109/tthz.2013.2275900

More information

Created

10/7/2017