Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology
Artikel i vetenskaplig tidskrift, 2014

Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.

millimeter-wave amplifier

LOW-NOISE AMPLIFIER

RECEIVER

Double heterojunction bipolar transistor (DHBT)

indium phosphide (InP)

SUBMILLIMETER-WAVE

monolithic microwave integrated circuit (MMIC)

H-band

Författare

Klas Eriksson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Sten Gunnarsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 4 1 56-64 6583229

Ämneskategorier

Fysik

DOI

10.1109/tthz.2013.2275900

Mer information

Skapat

2017-10-07