Intrinsically switchable thin film bulk acoustic wave resonators
Journal article, 2014

The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based on the thin films of paraelectric phase ferroelectrics is demonstrated experimentally. The composite BAW resonators based on the Ba0.25Sr0.75TiO3/SrRuO3/Ba0.25Sr0.75TiO3 multilayer structure are fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be switched more than two times (from 3.6GHz to 7.7 GHz) by changing polarity of the 5V dc bias voltage at one of the ferroelectric layers. The composite BAW resonators performance is analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric phase ferroelectrics.

Author

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Spartak Gevorgian

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 104 22 Art. no. 222905- 222905

Switchable and tunable composite film bulk acoustic wave resonators (CompFBAR)

Swedish Research Council (VR), 2012-01-01 -- 2014-12-31.

Subject Categories

Communication Systems

Infrastructure

Nanofabrication Laboratory

DOI

10.1063/1.4881141

More information

Created

10/8/2017