Intrinsically switchable thin film bulk acoustic wave resonators
Artikel i vetenskaplig tidskrift, 2014

The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based on the thin films of paraelectric phase ferroelectrics is demonstrated experimentally. The composite BAW resonators based on the Ba0.25Sr0.75TiO3/SrRuO3/Ba0.25Sr0.75TiO3 multilayer structure are fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be switched more than two times (from 3.6GHz to 7.7 GHz) by changing polarity of the 5V dc bias voltage at one of the ferroelectric layers. The composite BAW resonators performance is analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric phase ferroelectrics.

Författare

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Spartak Gevorgian

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 104 Art. no. 222905- 222905

Omkopplingsbara och avstämbara komposit-film-bulk-akustisk-våg-resonatorer (CompFBAR)

Vetenskapsrådet (VR), 2012-01-01 -- 2014-12-31.

Ämneskategorier

Kommunikationssystem

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1063/1.4881141