Intrinsically switchable thin film bulk acoustic wave resonators
Artikel i vetenskaplig tidskrift, 2014
The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based
on the thin films of paraelectric phase ferroelectrics is demonstrated experimentally. The composite
BAW resonators based on the Ba0.25Sr0.75TiO3/SrRuO3/Ba0.25Sr0.75TiO3 multilayer structure are
fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be
switched more than two times (from 3.6GHz to 7.7 GHz) by changing polarity of the 5V dc bias
voltage at one of the ferroelectric layers. The composite BAW resonators performance is
analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric phase
ferroelectrics.
Författare
Andrei Vorobiev
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Spartak Gevorgian
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 104 22 Art. no. 222905- 222905Omkopplingsbara och avstämbara komposit-film-bulk-akustisk-våg-resonatorer (CompFBAR)
Vetenskapsrådet (VR) (2011-4203), 2012-01-01 -- 2014-12-31.
Ämneskategorier
Kommunikationssystem
Infrastruktur
Nanotekniklaboratoriet
DOI
10.1063/1.4881141