Intrinsic energy band alignment of functional oxides
Journal article, 2014
The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photoelectrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
functional oxides
transitivity
electronic structure
photoelectron spectroscopy
energy band alignment
Author
Shunyi Li
Technische Universität Darmstadt
F. Chen
Technische Universität Darmstadt
R. Schafranek
Technische Universität Darmstadt
T. J. M. Bayer
Technische Universität Darmstadt
Karsten Rachut
Technische Universität Darmstadt
A. Fuchs
Technische Universität Darmstadt
S. Siol
Technische Universität Darmstadt
M. Weidner
Technische Universität Darmstadt
M. Hohmann
Technische Universität Darmstadt
Verena Pfeifer
Technische Universität Darmstadt
Jan Morasch
Technische Universität Darmstadt
C. Ghinea
Technische Universität Darmstadt
E. Arveux
Technische Universität Darmstadt
R. Gunzler
Technische Universität Darmstadt
J. Gassmann
Technische Universität Darmstadt
C. Korber
Technische Universität Darmstadt
Y. Gassenbauer
Technische Universität Darmstadt
F. Sauberlich
Technische Universität Darmstadt
G. V. Rao
Technische Universität Darmstadt
S. Payan
Institut de Chimie de la Matiere Condensee de Bordeaux
M. Maglione
Institut de Chimie de la Matiere Condensee de Bordeaux
C. Chirila
Institut de Physique des Materiaux, Bucarest-Magurele
L. Pintilie
Institut de Physique des Materiaux, Bucarest-Magurele
L. C. Jia
Helmholtz
K. Ellmer
Helmholtz
M. Naderer
Technische Universität Graz
K. Reichmann
Technische Universität Graz
U. Bottger
RWTH Aachen University
S. Schmelzer
RWTH Aachen University
R. C. Frunza
Jozef Stefan Institute
H. Ursic
Jozef Stefan Institute
B. Malic
Jozef Stefan Institute
W. B. Wu
Hefei National Laboratory for Physical Sciences at Microscale
Paul Erhart
Chalmers, Applied Physics, Materials and Surface Theory
A. Klein
Technische Universität Darmstadt
Physica Status Solidi - Rapid Research Letetrs
1862-6254 (ISSN) 1862-6270 (eISSN)
Vol. 8 6 571-576Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Energy Engineering
Condensed Matter Physics
Infrastructure
C3SE (Chalmers Centre for Computational Science and Engineering)
DOI
10.1002/pssr.201409034