Experimental results versus numerical simulations of In/Cu intermetallic compounds growth
Paper in proceeding, 2014
Indium is often used as a solder material which also plays a role of thermal interface e.g. in power LED systems. Indium and copper forms the intermetallic compounds. The growth rate constant at 400 K between copper and indium by the molecular dynamics simulations, as well as, experimentally was investigated. The results shown that the growth of the intermetallic compound in both cases follows the parabolic low, which indicates that the growth was mainly controlled by volume diffusion.
Author
T. Fałat
Wrocław University of Science and Technology
B.T. Płatek
Wrocław University of Science and Technology
P.K. Matkowski
Wrocław University of Science and Technology
J. Felba
Wrocław University of Science and Technology
Carl Zandén
Chalmers, Applied Physics, Electronics Material and Systems
L. Ye
SHT Smart High-Tech
Johan Liu
Chalmers, Applied Physics, Electronics Material and Systems
Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014, Marina Bay Sands, Singapore, 3-5 December 2014
797-800
978-147996994-4 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/EPTC.2014.7028372
ISBN
978-147996994-4