InP DHBT wideband amplifiers with up to 235 GHz bandwidth
Paper in proceeding, 2014
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction bipolar transistor technology. The amplifiers are designed using cascode cells, in a distributed amplifier topology, with simple on-chip resistive bias circuitry. A single stage design achieves 7.5 dB gain and 192 GHz bandwidth and a 2-cascaded distributed amplifier achieves gain in excess of 16 dB and with bandwidth exceeding 235 GHz, thus being the widest band amplifiers reported to date.
distributed amplifiers
DHBT
Wideband amplifiers
InP
CSSDA
Author
Klas Eriksson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
I.Z. Darwazeh
University College London (UCL)
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
Art. no. 6848436- 6848436978-147993869-8 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2014.6848436
ISBN
978-147993869-8