InP DHBT wideband amplifiers with up to 235 GHz bandwidth
Paper i proceeding, 2014

Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction bipolar transistor technology. The amplifiers are designed using cascode cells, in a distributed amplifier topology, with simple on-chip resistive bias circuitry. A single stage design achieves 7.5 dB gain and 192 GHz bandwidth and a 2-cascaded distributed amplifier achieves gain in excess of 16 dB and with bandwidth exceeding 235 GHz, thus being the widest band amplifiers reported to date.

distributed amplifiers

DHBT

Wideband amplifiers

InP

CSSDA

Författare

Klas Eriksson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

I.Z. Darwazeh

University College London (UCL)

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Art. no. 6848436- 6848436

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2014.6848436

ISBN

978-147993869-8