InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth
Journal article, 2015
heterojunction bipolar transistors (HBTs)
indium-phosphide (InP)
wideband amplifiers
Distributed amplifiers (DAs)
noise figure
Author
Klas Eriksson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
I.Z. Darwazeh
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 63 4 1334-1341 7052422Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/tmtt.2015.2405916