InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth
Artikel i vetenskaplig tidskrift, 2015

Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed and measured. The amplifiers use different types of distributed amplifier (DA) topologies, all based on cascode gain cells. A single-stage DA design achieves 7.5-dB gain and 192-GHz bandwidth and a two-cascaded single-stage DA achieves an average gain of 16 dB with a bandwidth of 235 GHz. The third circuit is a conventional DA with more than 10-dB gain from 70 kHz up to 180 GHz. To the authors' best knowledge, the single-stage DA and the two-cascaded single-stage DA are the widest band amplifiers in any technology reported to date. Furthermore, the conventional DA has a record bandwidth for circuits in conventional DA topology with gain from near dc.

heterojunction bipolar transistors (HBTs)

indium-phosphide (InP)

wideband amplifiers

Distributed amplifiers (DAs)

noise figure

Författare

Klas Eriksson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

I.Z. Darwazeh

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 63 4 1334-1341

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/tmtt.2015.2405916