PHEMT LNA design and characterization for 4G applications
Paper in proceeding, 2014
This paper presents a novel implementation of a wideband Low Noise Amplifier (LNA) for wireless communication, 4G Long Term Evolution (LTE) and wireless communication systems. Traditionally, CMOS based designs are fabricated for 4G applications. The proposed LNA design is based on a balanced configuration using ultra low noise Pseudo morphic High Electron Mobility Transistor (pHEMT) which has a fast switching response. The LNA exhibits a wideband frequency response from 1.9 to 2.4 GHz which makes it suitable for variety of wireless and mobile communication applications. The designed LNA has a NF of 0.588 dB with unconditional stability along with available gain of 12.850 dB. The LNA exhibits 20 dBm output power at 1dB gain compression and 28.5 dBm output at 3rd order intercept.
Wilkinson power divider (WPD)
CMOS
LTE
RF
Low noise amplifier (LNA)
PHEMT
Author
M. Arsalan
National University of Sciences and Technology (NUST)
F. Amir
National University of Sciences and Technology (NUST)
Talha Khan
Student at Chalmers
17th IEEE International Multi Topic Conference: Collaborative and Sustainable Development of Technologies, IEEE INMIC 2014 - Proceedings
61-66
978-147995754-5 (ISBN)
Subject Categories
Telecommunications
DOI
10.1109/INMIC.2014.7096912