PHEMT LNA design and characterization for 4G applications
Paper i proceeding, 2014

This paper presents a novel implementation of a wideband Low Noise Amplifier (LNA) for wireless communication, 4G Long Term Evolution (LTE) and wireless communication systems. Traditionally, CMOS based designs are fabricated for 4G applications. The proposed LNA design is based on a balanced configuration using ultra low noise Pseudo morphic High Electron Mobility Transistor (pHEMT) which has a fast switching response. The LNA exhibits a wideband frequency response from 1.9 to 2.4 GHz which makes it suitable for variety of wireless and mobile communication applications. The designed LNA has a NF of 0.588 dB with unconditional stability along with available gain of 12.850 dB. The LNA exhibits 20 dBm output power at 1dB gain compression and 28.5 dBm output at 3rd order intercept.

RF

Low noise amplifier (LNA)

LTE

Wilkinson power divider (WPD)

CMOS

PHEMT

Författare

M. Arsalan

F. Amir

Talha Khan

Chalmers, Signaler och system

17th IEEE International Multi Topic Conference: Collaborative and Sustainable Development of Technologies, IEEE INMIC 2014 - Proceedings

61-66

Ämneskategorier

Telekommunikation

DOI

10.1109/INMIC.2014.7096912

ISBN

978-147995754-5

Mer information

Skapat

2017-10-08