The effect of bilayer regions on the response of epitaxial graphene devices to environmental gating
Journal article, 2015
Author
R. E. Hill-Pearce
National Physical Laboratory (NPL)
V. Eless
National Physical Laboratory (NPL)
Arseniy Lartsev
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
N. A. Martin
National Physical Laboratory (NPL)
I. L. Barker Snook
National Physical Laboratory (NPL)
J. J. Helmore
National Physical Laboratory (NPL)
R. Yakimova
Linköping University
J. C. Gallop
National Physical Laboratory (NPL)
L. Hao
National Physical Laboratory (NPL)
Carbon
0008-6223 (ISSN)
Vol. 93 896-902Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
European Commission (EC) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Subject Categories
Materials Engineering
DOI
10.1016/j.carbon.2015.05.061