The effect of bilayer regions on the response of epitaxial graphene devices to environmental gating
Artikel i vetenskaplig tidskrift, 2015
Författare
R. E. Hill-Pearce
National Physical Laboratory (NPL)
V. Eless
National Physical Laboratory (NPL)
Arseniy Lartsev
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
N. A. Martin
National Physical Laboratory (NPL)
I. L. Barker Snook
National Physical Laboratory (NPL)
J. J. Helmore
National Physical Laboratory (NPL)
R. Yakimova
Linköpings universitet
J. C. Gallop
National Physical Laboratory (NPL)
L. Hao
National Physical Laboratory (NPL)
Carbon
0008-6223 (ISSN)
Vol. 93 896-902Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
Europeiska kommissionen (EU) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Ämneskategorier
Materialteknik
DOI
10.1016/j.carbon.2015.05.061