Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties
Journal article, 2015

We present a simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as "catalysts" for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N-2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of Shubnikov de Haas oscillations in the longitudinal magneto-resistance of the nanowires/nanobelts and their specific angular dependence confirms the existence of 2D topological surface states in the synthesised nanostructures.

Author

J. Andzane

University of Latvia

Gunta Kunakova

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sophie Charpentier

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

V. Hrkac

Technical Faculty of the

L. Kienle

Technical Faculty of the

M. Baitimirova

University of Latvia

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

D. Erts

University of Latvia

Nanoscale

2040-3364 (ISSN)

Vol. 7 38 15935-15944

Subject Categories

Materials Engineering

Nano Technology

DOI

10.1039/c5nr04574f

PubMed

26365282

More information

Latest update

3/1/2018 1