Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties
Artikel i vetenskaplig tidskrift, 2015

We present a simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as "catalysts" for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N-2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of Shubnikov de Haas oscillations in the longitudinal magneto-resistance of the nanowires/nanobelts and their specific angular dependence confirms the existence of 2D topological surface states in the synthesised nanostructures.

Författare

J. Andzane

Latvijas Universitate

Gunta Kunakova

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sophie Charpentier

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

V. Hrkac

Technical Faculty of the

L. Kienle

Technical Faculty of the

M. Baitimirova

Latvijas Universitate

Thilo Bauch

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Floriana Lombardi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

D. Erts

Latvijas Universitate

Nanoscale

2040-3364 (ISSN)

Vol. 7 38 15935-15944

Ämneskategorier

Materialteknik

Nanoteknik

DOI

10.1039/c5nr04574f

PubMed

26365282

Mer information

Senast uppdaterat

2018-03-01