Thermo-Mechanical Simulations of SiC Power Modules with Single and Double Sided Cooling
Paper in proceedings, 2015

Effectively removing dissipated heat from the switching devices enables a higher current carrying capability per chip area ratio, thus leading to smaller or fewer devices for a given power requirement specification. Further, the use of SiC based devices has proven to increase the efficiency of the system thereby reducing the dissipated heat. Thermal models have been used to compare SiC power modules. Single and double sided cooling have been simulated. The simulated maximum temperatures were 141 °C for the single sided version and 119.7 °C for the double sided version. In addition, the reliability of a single sided module and thermally induced plastic strains of a double sided module have been investigated. A local model of the wire bond interface to the transistor metallization shows a 30/00 maximum increase in plastic strain during the power cycle. Simulations of the creep strain rates in the die attach solder layer for a power cycling loads also shows a 30/00 increase in creep strain per cycle.


Klas Brinkfelt

Swerea IVF AB

Michael Edwards

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Jonas Ottosson

Volvo Group

Klaus Neumaier

Fairchild Semiconductor GmbH

Olaf Zschieschang

Fairchild Semiconductor GmbH

Alexander Otto

Fraunhofer-Institut fur Elektronische Nanosysteme

Eberhard Kaulfersch

Berliner Nanotest und Design

Dag R. Andersson

Swerea IVF AB

16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015

1 - 7 7103136

Subject Categories

Manufacturing, Surface and Joining Technology

Electrical Engineering, Electronic Engineering, Information Engineering





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