Noise measurements of the low Tc MgB2 HEB mixer at 1.6THz and 2.6THz
Paper in proceedings, 2015

We present results on MgB2 hot-electron bolometer noise measurements to show reproducibility of achieved results and robustness of the fabricated devices, which being passivated with silicon nitride shows the same performance after 1.5 year storing in nitrogen atmosphere. Noise temperature measurements were performed for the HEB made of 10nm MgB2 thin film on Al2O3 with Tc of 8.5K for 1.6THz LO at 2.7K and 4.2K. The minimum double side band noise temperatures corrected for optical losses for different bath temperatures were 700K and 1150K, whereas the noise bandwidth was 3.2GHz and 3.5GHz, respectively. The mixer output noise temperature and the conversion gain were 26K and -17.7dB, 27K and -14.9dB, respectively. For 2.6THz LO at 2.7K the corresponding values are 1200K and 3.7GHz.

Author

Evgenii Novoselov

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Stella Bevilacqua

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Serguei Cherednichenko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Hiroyuki Shibata

Nippon Telegraph and Telephone Corporation

Yasuhiro Tokura

Nippon Telegraph and Telephone Corporation

26th International Symposium on Space Terahertz Technology March 16-18, 2015, Cambridge, United States

P-31

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Astronomy, Astrophysics and Cosmology

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

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Created

10/7/2017