Atom probe tomography of a Ti-Si-Al-C-N coating grown on a cemented carbide substrate
Journal article, 2015

The elemental distribution within a Ti-Si-Al-C-N coating grown by physical vapour deposition on a Crdoped WC-Co cemented carbide substrate has been investigated by atom probe tomography. Special attention was paid to the coating/substrate interface region. The results indicated a diffusion of substrate binder phase elements into the Ti-N adhesion layer. The composition of this layer, and the Ti-Al-N interlayer present between the adhesion layer and the main Ti-Si-Al-C-N layer, appeared to be sub-stoichiometric. The analysis of the interlayer showed the presence of internal surfaces, possibly grain boundaries, depleted in Al. The composition of the main Ti-Al-Si-C-N layer varied periodically in the growth direction; layers enriched in Ti appeared with a periodicity of around 30 nm. Laser pulsing resulted in a good mass resolution that made it possible to distinguish between N+ and Si2+ at 14 Da.

Cemented carbide cutting tools

Diffusion

Physical vapour deposition

Nitrides

Atom probe tomography

Author

Mattias Thuvander

Chalmers, Applied Physics, Materials Microstructure

Gustaf Östberg

Chalmers, Applied Physics, Materials Microstructure

M. Ahlgren

Sandvik

Lena Falk

Chalmers, Applied Physics, Materials Microstructure

Ultramicroscopy

0304-3991 (ISSN)

Vol. 159 308-313

Subject Categories

Other Materials Engineering

DOI

10.1016/j.ultramic.2015.04.008

PubMed

25956619

More information

Latest update

5/30/2018