Effect of the Critical and Operational Temperatures on the Sensitivity of MgB2 HEB Mixers
Journal article, 2016

In this paper, we present a study of the noise and the gain of MgB hot-electron bolometer mixers with different critical temperatures and at various operation temperatures. At a local oscillator (LO) frequency of 1.63 THz the minimum input receiver noise temperature was 700 K with a gain of 18 dB for a device with a of 8.5 K. For a device with a of 22.5 K the corresponding values were 1700 K and 19 dB. For the latter device the was 2150 K at a bath temperature of 12 K, which is not achievable with Nb-compound based HEB mixers. We present and compare different methods for measurements of the HEB mixer gain and the output noise.

hot-electron bolometer (HEB)

noise temperature

conversion gain

MgB2 film

Bolometer

sub-mm astronomy

THz mixer.

Author

Evgenii Novoselov

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Stella Bevilacqua

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Serguei Cherednichenko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Hiroyuki Shibata

Yasuhiro Tokura

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 6 2 238-277

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Physical Sciences

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

DOI

10.1109/TTHZ.2016.2520659

More information

Created

10/7/2017