Local electric field screening in bi-layer graphene devices
Journal article, 2014

© 2014 Panchal, Giusca, Lartsev, Yakimova and Kazakova. We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG) and bi-layer graphene (2LG) devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme.

Electrical gating

Scanning gate microscopy

Single-layer graphene

Epitaxial graphene

Double-layer graphene


V. Panchal

National Physical Laboratory (NPL)

Royal Holloway University of London

C. E. Giusca

National Physical Laboratory (NPL)

Arseniy Lartsev

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

R. Yakimova

Linköping University

O. Kazakova

National Physical Laboratory (NPL)

Frontiers of Physics

2296424x (eISSN)

Vol. 2 1-10

Subject Categories

Materials Engineering



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