Flip-chip assembled 7 GHz ultra-low phase-noise InGaP HBT oscillator
Paper in proceedings, 2010

This paper reports on a flip-chip assembled 7 GHz ultra-low phase-noise GaAs InGaP heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) oscillator. The cross-coupled oscillator was flip-chip bonded to an in-house fabricated Al2O3 carrier with patterns optimized for low-loss transitions. After flip-chip, the phase noise of the crosscoupled InGaP HBT oscillator was improved due to an increased Q-factor of the resonant tank. An ultra-low phase-noise of -112 dBc/Hz @ 100 kHz offset and -128 dBc/Hz @ 1 MHz offset with a high output power of 7 dBm at 7 GHz was achieved. To our best knowledge, this is the lowest phase noise reported for a flip-chip assembled oscillator.

Cross-coupled oscillators

Flip chip

Microwaves

Interconnection

Microwave

Monolithic microwave integrated circuits

Semiconductor device manufacture

High output power

Cross-coupled

Resonant tanks

Heterojunction bipolar transistors

MMIC

InGaP heterojunction bipolar transistors (HBT)

Phase noise

Flip-chip

Oscillator

Microwave oscillators

Flip chip devices

Monolithic microwave integrated circuit oscillators

Oscillators (electronic)

Author

Li-Han Hsu

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Dan Kuylenstierna

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

E. Y. Chang

National Chiao Tung University Taiwan

C. T. Wang

National Chiao Tung University Taiwan

2010 International Conference on Compound Semiconductor Manufacturing Technology; Portland, OR; United States; 17 May 2010 through 20 May 2010

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-189358015-2

More information

Created

10/7/2017