Design considerations and laboratory testing of power circuits for parallel operation of silicon carbide MOSFETs
Paper in proceeding, 2015
MOSFET devices
Parallel operation
Power electronics
Switching loss
Schottky diodes
Silicon carbides (SiC)
Silicon Carbide (SiC)
Electric inductors
Reconfigurable hardware
Parallel operations
Schottky barrier diodes
Schottky diode
Silicon carbide
Switching losses
Electrolysis
MOS-FET
Switching
MOSFET
Author
S. Tiwari
Norwegian University of Science and Technology (NTNU)
Ali Rabiei
Chalmers, Energy and Environment, Electric Power Engineering
P. Shrestha
Norwegian University of Science and Technology (NTNU)
O. M. Midtgard
Norwegian University of Science and Technology (NTNU)
T. M. Undeland
Norwegian University of Science and Technology (NTNU)
R. Lund
SmartMotor AS
A. Gytri
Norwegian University of Science and Technology (NTNU)
17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, Geneva, Switzerland, 8-10 September
7309165
978-907581522-1 (ISBN)
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/EPE.2015.7309165
ISBN
978-907581522-1