Angle-Dependent Microresonator ESR Characterization of Locally Doped Gd3+:Al2O3
Journal article, 2016
Interfacing rare-earth-doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here, we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd3+ in Al2O3 spin system coupled to a superconducting microresonator. We investigate the properties of the implanted spin system through angular-dependent microresonator electron spin resonance (micro-ESR) spectroscopy. We find, despite the high-energy near-surface implantation, the resulting micro-ESR spectra to be in excellent agreement with the modeled Hamiltonian, supporting the integration of dopant ions into their relevant lattice sites while maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our microresonator, emphasizing the need for controllable local implantation.
Author
I. S. Wisby
Royal Holloway University of London
National Physical Laboratory (NPL)
Sebastian Erik de Graaf
National Physical Laboratory (NPL)
R. Gwilliam
University of Surrey
Astghik Adamyan
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
P. J. Meeson
Royal Holloway University of London
A. Y. Tzalenchuk
National Physical Laboratory (NPL)
Royal Holloway University of London
T. Lindstrom
National Physical Laboratory (NPL)
Physical Review Applied
2331-7019 (eISSN)
Vol. 6 2 024021Subject Categories
Physical Sciences
Condensed Matter Physics
DOI
10.1103/PhysRevApplied.6.024021