Fabrication of nanowire growth templates by forming pinholes in SiOx on Si
Paper in proceeding, 2016
InAs nanowire growth is carried out on a thin grainy layer of SiOx on Si (111), utilizing the openings of pinholes in the SiOx layer by isotropic wet etching. SiOx layers with different thicknesses were deposited and etched down to different thicknesses, to investigate how the initial layer roughness and the etching depth influence the formation of pinholes and thereafter the NW growth.
Author
Huan Zhao Ternehäll
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Elham Fadaly
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
The 43rd International Symposium on Compound Semiconductor
978-1-5090-1964-9 (ISBN)
Areas of Advance
Information and Communication Technology
Materials Science
Subject Categories
Materials Engineering
Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1109/ICIPRM.2016.7528561
ISBN
978-1-5090-1964-9