Fabrication of graphene quantum hall resistance standard in a cryogen-Table-Top system
Paper in proceeding, 2016
We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively easy to use and compact cryogen-free system operating at a temperature of around 3.8 K and magnetic field below 5 T. This advance in technology is due to the unique properties of epitaxial graphene on silicon carbide (SiC) which lifts the stringent requirements for quantum hall effect seen in conventional semiconductors. This paper presents the processes involved in fabrication and characterization of metrologically viable epitaxial graphene samples.
measurement standards
Graphene
quantum hall effect
microfabrication
Epitaxial layers
Author
Hans He
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Tjbm Janssen
National Physical Laboratory (NPL)
S. Rozhko
National Physical Laboratory (NPL)
A.Y. Tzalenchuk
Royal Holloway University of London
National Physical Laboratory (NPL)
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
R. Yakimova
Linköping University
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
2016 Conference on Precision Electromagnetic Measurements, CPEM 2016; The Westin OttawaOttawa; Canada; 10-15 July 2016
Art no 7540516-
978-1-4673-9134-4 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/CPEM.2016.7540516
ISBN
978-1-4673-9134-4