Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
Paper in proceedings, 2016

This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal stressing of the device is evaluated. The results indicate that the current asymmetry does not lead to a significant thermal stressing unbalance between the substrates.

Accelerators

IGBT

Test bench

Thermal stress

Measurement

Author

Panagiotis Asimakopoulos

Chalmers, Energy and Environment, Electric Power Engineering

K. Papastergiou

European Organization for Nuclear Research

Torbjörn Thiringer

Chalmers, Energy and Environment, Electric Power Engineering

Massimo Bongiorno

Chalmers, Energy and Environment, Electric Power Engineering

18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe, Karlsruhe, Germany, 5-9 September 2016

2325-0313 (ISSN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/EPE.2016.7695453

ISBN

9789075815245

More information

Created

10/8/2017