Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
Paper in proceeding, 2016
This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal stressing of the device is evaluated. The results indicate that the current asymmetry does not lead to a significant thermal stressing unbalance between the substrates.
IGBT
Thermal stress
Accelerators
Test bench
Measurement
Author
Panagiotis Asimakopoulos
Chalmers, Energy and Environment, Electric Power Engineering
K. Papastergiou
CERN
Torbjörn Thiringer
Chalmers, Energy and Environment, Electric Power Engineering
Massimo Bongiorno
Chalmers, Energy and Environment, Electric Power Engineering
18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe, Karlsruhe, Germany, 5-9 September 2016
2325-0313 (ISSN)
9789075815245 (ISBN)
Areas of Advance
Energy
Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/EPE.2016.7695453