Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
Paper i proceeding, 2016

This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal stressing of the device is evaluated. The results indicate that the current asymmetry does not lead to a significant thermal stressing unbalance between the substrates.

Accelerators

IGBT

Test bench

Thermal stress

Measurement

Författare

Panagiotis Asimakopoulos

Chalmers, Energi och miljö, Elkraftteknik

K. Papastergiou

CERN

Torbjörn Thiringer

Chalmers, Energi och miljö, Elkraftteknik

Massimo Bongiorno

Chalmers, Energi och miljö, Elkraftteknik

18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe, Karlsruhe, Germany, 5-9 September 2016

2325-0313 (ISSN)


9789075815245 (ISBN)

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/EPE.2016.7695453

ISBN

9789075815245

Mer information

Skapat

2017-10-08