Driver Topologies for RF Doherty Power Amplifiers
Journal article, 2017

In this letter, class-B, embedded class-B, and Doherty driver topologies are investigated for RF Doherty Power Amplifiers (PAs). The investigation is firstly conducted theoretically and by simulations and then verified by design and implementation of the different topologies at 2.1 GHz using GaN-HEMT transistors. The results show that the highest lineup efficiency can be achieved when using a Doherty driver. Modulated measurements using the same LTE signal and the same digital per-distorter (DPD), show about 2% and 4% higher average lineup efficiency when the Doherty driver is used compared to the class-B and embedded class-B drivers, respectively.

two-stage power amplifier

Doherty power amplifier

driver amplifier



Paul Saad


Zahra Asghari

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Hossein Mashad Nemati


IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 27 1 67-69

Areas of Advance

Information and Communication Technology

Subject Categories


Electrical Engineering, Electronic Engineering, Information Engineering



More information

Latest update