Driver Topologies for RF Doherty Power Amplifiers
Artikel i vetenskaplig tidskrift, 2017

In this letter, class-B, embedded class-B, and Doherty driver topologies are investigated for RF Doherty Power Amplifiers (PAs). The investigation is firstly conducted theoretically and by simulations and then verified by design and implementation of the different topologies at 2.1 GHz using GaN-HEMT transistors. The results show that the highest lineup efficiency can be achieved when using a Doherty driver. Modulated measurements using the same LTE signal and the same digital per-distorter (DPD), show about 2% and 4% higher average lineup efficiency when the Doherty driver is used compared to the class-B and embedded class-B drivers, respectively.

two-stage power amplifier

Doherty power amplifier

GaN-HEMT

driver amplifier

Författare

Paul Saad

Ericsson Sweden

Zahra Asghari

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Hossein Mashad Nemati

Ericsson Sweden

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 27 67-69

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Telekommunikation

Elektroteknik och elektronik

DOI

10.1109/LMWC.2016.2629977