Driver Topologies for RF Doherty Power Amplifiers
Artikel i vetenskaplig tidskrift, 2017

In this letter, class-B, embedded class-B, and Doherty driver topologies are investigated for RF Doherty Power Amplifiers (PAs). The investigation is firstly conducted theoretically and by simulations and then verified by design and implementation of the different topologies at 2.1 GHz using GaN-HEMT transistors. The results show that the highest lineup efficiency can be achieved when using a Doherty driver. Modulated measurements using the same LTE signal and the same digital per-distorter (DPD), show about 2% and 4% higher average lineup efficiency when the Doherty driver is used compared to the class-B and embedded class-B drivers, respectively.

two-stage power amplifier

Doherty power amplifier

driver amplifier

GaN-HEMT

Författare

Paul Saad

Ericsson AB

Zahra Asghari

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Hossein Mashad Nemati

Ericsson AB

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN) 15581764 (eISSN)

Vol. 27 1 67-69 7792608

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Telekommunikation

Elektroteknik och elektronik

DOI

10.1109/LMWC.2016.2629977

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Senast uppdaterat

2022-04-05