Direct extraction of MOS transistor model parameters
Journal article, 1994

The direct extraction method of MOS transistor parameters is summarized and results from its application to the first Norchip 1µm CMOS process run are presented. Two different transistor models (SPICE level 3 and BSIM) have been used, and both models are found to be useful at least down to 1µm devices: typical average relative errors between measured and calculated currents are in the 2-9% range. Two methods of calculating the difference between drawn and effective geometries have been compared. The influence of the source/drain series resistance is also discussed.

Parameter extraction

MOSFET model parameters


Peter R. Karlsson

Department of Solid State Electronics

Kjell Jeppson

Department of Solid State Electronics

Department of Microelectronics and Nanoscience

Analog Integrated Circuits and Signal Processing

0925-1030 (ISSN) 1573-1979 (eISSN)

Vol. 5 3 199-212

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

More information