MgB2 thin film terahertz mixers

Other conference contribution, 2006

Thin film (20 nm) MgB2 bolometric devices were made on silicon substrates. The performance of the devices as THz mixers was investigated with respect to the gain bandwidth and the noise temperature. For the given film thickness the 3 dB gain roll-off frequency is 2.5 GHz, which is much higher than for the NbN HEB mixers of the same thickness. Corrected DSB mixer noise temperature is 2000 K at 2 GHz IF. The noise bandwidth was measured in the IF range of 2-5 GHz.