MgB2 thin film terahertz mixers
Övrigt konferensbidrag, 2006
Thin film (20 nm) MgB2 bolometric devices were made on silicon substrates. The performance of the devices as THz mixers was investigated with respect to the gain bandwidth and the noise temperature. For the given film thickness the 3 dB gain roll-off frequency is 2.5 GHz, which is much higher than for the NbN HEB mixers of the same thickness. Corrected DSB mixer noise temperature is 2000 K at 2 GHz IF. The noise bandwidth was measured in the IF range of 2-5 GHz.
terahertz
mixer
MgB2
electron-phonon interaction
superconducting film
Författare
Serguei Cherednichenko
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi
Vladimir Drakinskiy
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi
Kenji Ueda
Michio Naito
in Proc.17th Intern. Symp. Space THz Technology, Paris, France, May. 2006
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