Study of in-plane electrical transport anisotropy of alpha-axis oriented YBa2Cu3O7-delta nanodevices
Journal article, 2017

In the present work, we report the growth of fully untwinned high-quality a-axis-oriented YBa2Cu3O7-delta films on (100) SrLaGaO4 substrates by using PrBa2Cu3O7-delta as a buffer layer. We also fabricated nanowires at different angles gamma with respect to the [0,1,0] direction of the substrate and studied the in-plane anisotropy of the critical current density, which we explained by considering the anisotropy in the coherence length xi and London penetration depth lambda L. Finally, half-integer Shapiro-like steps measured in slightly underdoped c-axis oriented (gamma = 90 degrees) nanowires point towards a different transport regime, which could shed light on intriguing issues of high-critical-temperature superconductors.

Author

Reza Baghdadi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Riccardo Arpaia

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

EA Stepantsov

Marco Arzeo

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

D. Golubev

Domenico Montemurro

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Eric Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Physical Review B: covering condensed matter and materials physics

2469-9969 (eISSN)

Vol. 95 18 Article no. 184505-

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Condensed Matter Physics

DOI

10.1103/PhysRevB.95.184505

More information

Created

10/8/2017