Study of in-plane electrical transport anisotropy of alpha-axis oriented YBa2Cu3O7-delta nanodevices
Artikel i vetenskaplig tidskrift, 2017

In the present work, we report the growth of fully untwinned high-quality a-axis-oriented YBa2Cu3O7-delta films on (100) SrLaGaO4 substrates by using PrBa2Cu3O7-delta as a buffer layer. We also fabricated nanowires at different angles gamma with respect to the [0,1,0] direction of the substrate and studied the in-plane anisotropy of the critical current density, which we explained by considering the anisotropy in the coherence length xi and London penetration depth lambda L. Finally, half-integer Shapiro-like steps measured in slightly underdoped c-axis oriented (gamma = 90 degrees) nanowires point towards a different transport regime, which could shed light on intriguing issues of high-critical-temperature superconductors.

Författare

Reza Baghdadi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Riccardo Arpaia

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

EA Stepantsov

Marco Arzeo

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

D. Golubev

Domenico Montemurro

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Eric Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Thilo Bauch

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Floriana Lombardi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Physical Review B: covering condensed matter and materials physics

2469-9969 (eISSN)

Vol. 95 18 Article no. 184505-

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1103/PhysRevB.95.184505

Mer information

Skapat

2017-10-08