Metamorphic HEMT technology for low-noise applications
Paper in proceeding, 2009

Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic f T of 220 / 375 GHz and an extrinsic transconduction g m , max , of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized. A small signal gain of 21 dB and a noise figure of 1.9 dB was measured in the frequency range between 80 and 100 GHz at ambient temperature. To investigate the low temperature behaviour of the 100 nm technology, single 4 * 40 μm mHEMTs were integrated in hybrid 4 - 8 GHz (Chalmers) and 16 - 26 GHz (Yebes) amplifiers. At cryogenic temperatures noise temperatures of 3 K at 5 GHz and 12 K at 22 GHz were achieved.

Author

A. Leuther

Fraunhofer Society

A. Tessmann

Fraunhofer Society

I. Kallfass

Fraunhofer Society

R. Lösch

Fraunhofer Society

M. Seelmann-Eggebert

Fraunhofer Society

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

F. Schafer

Chalmers

J.D.G. Puyol

Max Planck Society

M. Schlechtweg

Yebes Observatory

M. Mikulla

Fraunhofer Society

O. Ambacher

Fraunhofer Society

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

10928669 (ISSN)

188-191 5012475
978-142443433-6 (ISBN)

Subject Categories (SSIF 2011)

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICIPRM.2009.5012475

ISBN

978-142443433-6

More information

Latest update

3/8/2025 1