Metamorphic HEMT technology for low-noise applications
Paper i proceeding, 2009

Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic f T of 220 / 375 GHz and an extrinsic transconduction g m , max , of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized. A small signal gain of 21 dB and a noise figure of 1.9 dB was measured in the frequency range between 80 and 100 GHz at ambient temperature. To investigate the low temperature behaviour of the 100 nm technology, single 4 * 40 μm mHEMTs were integrated in hybrid 4 - 8 GHz (Chalmers) and 16 - 26 GHz (Yebes) amplifiers. At cryogenic temperatures noise temperatures of 3 K at 5 GHz and 12 K at 22 GHz were achieved.

Författare

A. Leuther

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

A. Tessmann

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

I. Kallfass

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

R. Lösch

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

M. Seelmann-Eggebert

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

Niklas Wadefalk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

F. Schafer

Chalmers

J.D.G. Puyol

Max Planck-institutet

M. Schlechtweg

Centro Astronomico de Yebes

M. Mikulla

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

O. Ambacher

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

10928669 (ISSN)

188-191 5012475

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/ICIPRM.2009.5012475

ISBN

978-142443433-6

Mer information

Senast uppdaterat

2018-09-10