Thermoelectric effects in graphene at high bias current and under microwave irradiation
Journal article, 2017

We use a split top gate to induce doping of opposite signs in different parts of a graphene field-effect transistor, thereby effectively forming a graphene thermocouple. The thermocouple is sensitive to the electronic temperature in graphene, which can be several hundred kelvin higher than the ambient one at sufficiently high bias current. Combined with the high thermoelectric power of graphene, this allows for i) simple measurements of the electronic temperature and ii) building thermoelectric radiation detectors. A simple prototype graphene thermoelectric detector shows a temperature-independent optical responsivity of around 400 V/W at 94 GHz at temperatures of 4-50 K.

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Author

Grigory Skoblin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Jie Sun

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Avgust Yurgens

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Scientific Reports

2045-2322 (ISSN)

Vol. 7 1 15542

Subject Categories

Physical Sciences

DOI

10.1038/s41598-017-15857-w

PubMed

29138495

More information

Created

12/4/2017