Electrically injected GaAsBi/GaAs single quantum well laser diodes
Journal article, 2017

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77?150 K, and reduced to 90 K in the range of 150?273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77?273 K.

Author

Juanjuan Liu

Chinese Academy of Sciences

Wenwu Pan

Chinese Academy of Sciences

Xiaoyan Wu

Chinese Academy of Sciences

Chunfang Cao

Chinese Academy of Sciences

Yaoyao Li

Chinese Academy of Sciences

X Chen

Chinese Academy of Sciences

Yanchao Zhang

Chinese Academy of Sciences

ShanghaiTech University

L Wang

Chinese Academy of Sciences

Jinyi Yan

Chinese Academy of Sciences

Dongliang Zhang

Chinese Academy of Sciences

yuxin song

Chinese Academy of Sciences

Jun Shao

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

AIP Advances

2158-3226 (ISSN)

Vol. 7 11 Article Number: 115006 - 115006

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1063/1.4985231

More information

Latest update

5/30/2018