Electrically injected GaAsBi/GaAs single quantum well laser diodes
Journal article, 2017
We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77?150 K, and reduced to 90 K in the range of 150?273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77?273 K.
Author
Juanjuan Liu
Chinese Academy of Sciences
Wenwu Pan
Chinese Academy of Sciences
Xiaoyan Wu
Chinese Academy of Sciences
Chunfang Cao
Chinese Academy of Sciences
Yaoyao Li
Chinese Academy of Sciences
X Chen
Chinese Academy of Sciences
Yanchao Zhang
Chinese Academy of Sciences
ShanghaiTech University
L Wang
Chinese Academy of Sciences
Jinyi Yan
Chinese Academy of Sciences
Dongliang Zhang
Chinese Academy of Sciences
yuxin song
Chinese Academy of Sciences
Jun Shao
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
AIP Advances
2158-3226 (ISSN) 21583226 (eISSN)
Vol. 7 11 Article Number: 115006 - 115006Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1063/1.4985231