A low-noise K-band VCO based on room-temperature ferroelectric varactors
Journal article, 2007

This paper reports a K-band voltage-controlled oscillator based on room-temperature ferroelectric varactors. The circuit is realized as a hybrid module where flip-chip transistors are mounted on a silicon substrate with integrated ferroelectric varactors and passive circuitry. The size of the module is 4.7 × 2.2 mm 2 . The measured center frequency is 16.5 GHz with a linear tunability of 6.7% and an output power of 3 dBm±1 dB over the tuning range. The measured phase noise at center frequency is -95 dBc/Hz at 100-kHz offset. Another version of the oscillator is measured operating at 19.6 GHz with a tunability of 3.3% and a phase noise of -102 dBc/Hz at 100-kHz offset. © 2007 IEEE.

Author

Martin Norling

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Harald Jacobsson

Ericsson

IEEE

Spartak Gevorgian

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 55 2 361-369

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2006.889332

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Latest update

2/7/2020 9