A low-noise K-band VCO based on room-temperature ferroelectric varactors
Artikel i vetenskaplig tidskrift, 2007

This paper reports a K-band voltage-controlled oscillator based on room-temperature ferroelectric varactors. The circuit is realized as a hybrid module where flip-chip transistors are mounted on a silicon substrate with integrated ferroelectric varactors and passive circuitry. The size of the module is 4.7 × 2.2 mm 2 . The measured center frequency is 16.5 GHz with a linear tunability of 6.7% and an output power of 3 dBm±1 dB over the tuning range. The measured phase noise at center frequency is -95 dBc/Hz at 100-kHz offset. Another version of the oscillator is measured operating at 19.6 GHz with a tunability of 3.3% and a phase noise of -102 dBc/Hz at 100-kHz offset. © 2007 IEEE.

Författare

Martin Norling

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågs- och terahertzteknologi

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågs- och terahertzteknologi

Harald Jacobsson

IEEE

Ericsson Microwave Systems AB

Spartak Gevorgian

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågs- och terahertzteknologi

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 55 2 361-369

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/TMTT.2006.889332

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Skapat

2017-10-06