Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

M Kaniewska; Olof Engström; M Pacholak-Cybulska; Mahdad Sadeghi

Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique
Journal article, 2007

Author

M Kaniewska

Olof Engström

Solid State Electronics

Other publications Research

M Pacholak-Cybulska

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2)

Other publications Research

Physica Status Solidi (a)

Vol. 204 987-

Subject Categories

Physical Sciences

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Created

10/7/2017

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Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique Journal article, 2007