Harmonic Distortion Analysis of InP HBTs with 650 GHz f(max) for High Data Rate Communication Systems
Paper in proceeding, 2017
High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors (HBTs) with various emitter widths was investigated. Geometry scalable parameters for the compact model (CM) HICUM/L2 v. 2.34, featuring a two-region base-collector capacitance formulation, were extracted from temperature dependent DC and AC measurements of HBTs and from the special test structures. Single tone harmonic distortion and active two tone load pull measurements were carried out for different emitter area devices. The compact model was used for data analysis.
harmonic distortion
noise measurements
compact modeling
linearity
Heterojunction bipolar transistor
intermodulation distortion
Author
P. Sakalas
Center for Physical Sciences & Technology
Technische Universität Dresden
M. Schroter
Technische Universität Dresden
University of California
T. Nardmann
Technische Universität Dresden
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Published in
IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest
1550-8781 (ISSN)
Vol. 2017-January978-1-5090-6069-6 (ISBN)
Conference
39th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Miami, USA, 2017-10-21 - 2017-10-24
Miami, USA, 2017-10-21 - 2017-10-24
Categorizing
Subject Categories (SSIF 2011)
Applied Mechanics
Infrastructure Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
DOI
10.1109/CSICS.2017.8240429