Harmonic Distortion Analysis of InP HBTs with 650 GHz f(max) for High Data Rate Communication Systems
Paper in proceeding, 2017

High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors (HBTs) with various emitter widths was investigated. Geometry scalable parameters for the compact model (CM) HICUM/L2 v. 2.34, featuring a two-region base-collector capacitance formulation, were extracted from temperature dependent DC and AC measurements of HBTs and from the special test structures. Single tone harmonic distortion and active two tone load pull measurements were carried out for different emitter area devices. The compact model was used for data analysis.

harmonic distortion

noise measurements

compact modeling


Heterojunction bipolar transistor

intermodulation distortion


P. Sakalas

Center for Physical Sciences & Technology

Technische Universität Dresden

M. Schroter

Technische Universität Dresden

University of California

T. Nardmann

Technische Universität Dresden

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest

1550-8781 (ISSN)

978-1-5090-6069-6 (ISBN)

39th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Miami, USA,

Subject Categories

Applied Mechanics

Infrastructure Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering



More information

Latest update

3/9/2018 1