Harmonic Distortion Analysis of InP HBTs with 650 GHz f(max) for High Data Rate Communication Systems
Paper i proceeding, 2017

High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors (HBTs) with various emitter widths was investigated. Geometry scalable parameters for the compact model (CM) HICUM/L2 v. 2.34, featuring a two-region base-collector capacitance formulation, were extracted from temperature dependent DC and AC measurements of HBTs and from the special test structures. Single tone harmonic distortion and active two tone load pull measurements were carried out for different emitter area devices. The compact model was used for data analysis.

harmonic distortion

noise measurements

compact modeling


Heterojunction bipolar transistor

intermodulation distortion


P. Sakalas

Fiziniu ir Technologijos Mokslu Centras

Technische Universität Dresden

M. Schroter

Technische Universität Dresden

University of California

T. Nardmann

Technische Universität Dresden

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest

1550-8781 (ISSN)

978-1-5090-6069-6 (ISBN)

39th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Miami, USA,


Teknisk mekanik


Annan elektroteknik och elektronik



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